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| www.irf.com 1 12/6/04 irlr7833pbf IRLU7833PBF hexfet power mosfet notes through are on page 11 applications benefits very low rds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current high frequency synchronous buck converters for computer processor power high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use lead-free d-pak irlr7833pbf i-pak IRLU7833PBF v dss r ds(on) max qg 30v 4.5m 33nc absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c maximum power dissipation w p d @t c = 100c maximum power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.05 r ja junction-to-ambient (pcb mount) ??? 50 c/w r ja junction-to-ambient ??? 110 300 (1.6mm from case) 10 lbf in (1.1n m) max. 140 99 560 20 30 -55 to + 175 140 0.95 71
2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 19 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 3.6 4.5 m ? ??? 4.4 5.5 v gs(th) gate threshold voltage 1.5 ??? 2.2 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -6.0 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 66 ??? ??? s q g total gate charge ??? 33 50 q gs1 pre-vth gate-to-source charge ??? 8.7 ??? q gs2 post-vth gate-to-source charge ??? 2.1 ??? nc q gd gate-to-drain charge ??? 13 ??? q godr gate charge overdrive ??? 9.9 ??? see fig. 16 q sw switch char g e (q gs2 + q gd ) ??? 15 ??? q oss output charge ??? 22 ??? nc t d(on) turn-on delay time ??? 14 ??? t r rise time ??? 6.9 ??? t d(off) turn-off delay time ??? 23 ??? ns t f fall time ??? 15 ??? c iss input capacitance ??? 4010 ??? c oss output capacitance ??? 950 ??? pf c rss reverse transfer capacitance ??? 470 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener gy mj i ar avalanche current a e ar repetitive avalanche ener gy mj diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 140 (body diode) a i sm pulsed source current ??? ??? 560 ( bod y diode ) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 39 58 ns q rr reverse recovery charge ??? 37 55 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) mosfet symbol ??? v gs = 4.5v typ. ??? ??? i d = 12a v gs = 0v v ds = 15v t j = 25c, i f = 12a, v dd = 15v di/dt = 100a/s t j = 25c, i s = 12a, v gs = 0v showing the integral reverse p-n junction diode. clamped inductive load v ds = 15v, i d = 12a v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 12a v ds = 16v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 15a conditions 14 max. 530 20 ? = 1.0mhz v gs = 4.5v, i d = 12a v gs = 20v v gs = -20v v ds = v gs , i d = 250a v ds = 24v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.25v 20s pulse width tj = 25c vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.25v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.25v 20s pulse width tj = 175c vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.25v 2.0 3.0 4.0 5.0 6.0 v gs , gate-to-source voltage (v) 0.10 1.00 10.00 100.00 1000.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 25v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 30a v gs = 10v 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1020304050 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 12a 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec tc = 25c tj = 175c single pulse www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 25 50 75 100 125 150 175 0 25 50 75 100 125 150 i , drain current (a) d limited by package 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13. gate charge test circuit fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 14a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 14b. switching time waveforms 1 0.1 % + - 25 50 75 100 125 150 starting t j , junction temperature (c) 0 2500 5000 7500 10000 12500 15000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 8.2a 14a bottom 20a www.irf.com 7 fig 15. for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ! " # ? $ %&% % ? " '' ? %&% % ( & fig 16. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 8 www.irf.com control fet !" # $ %& !" # #' p loss = p conduction + p switching + p drive + p output this can be expanded and approximated by; p loss = i rms 2 r ds(on ) () + i q gd i g v in f ? ? ? ? ? ? + i q gs 2 i g v in f ? ? ? ? ? ? + q g v g f () + q oss 2 v in f ? ? ? ? " ( %& !" %& !" " ) # * % + %& !" # # , # - . / # # synchronous fet the power loss equation for q2 is approximated by; p loss = p conduction + p drive + p output * p loss = i rms 2 r ds(on) () + q g v g f () + q oss 2 v in f ? ? ? ? ? + q rr v in f ( ) *dissipated primarily in q1. for the synchronous mosfet q2, r ds(on) is an im- portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. under light load the mosfet must still be turned on and off by the con- trol ic so the gate drive losses become much more significant. secondly, the output charge q oss and re- verse recovery charge q rr both generate losses that are transfered to q1 and increase the dissipation in that device. thirdly, gate charge will impact the mosfets? susceptibility to cdv/dt turn on. the drain of q2 is connected to the switching node of the converter and therefore sees transitions be- tween ground and v in . as q1 turns on and off there is a rate of change of drain voltage dv/dt which is ca- pacitively coupled to the gate of q2 and can induce a voltage spike on the gate that is sufficient to turn the mosfet on, resulting in shoot-through current . the ratio of q gd /q gs1 must be minimized to reduce the potential for cdv/dt turn on. power mosfet selection for non-isolated dc/dc converters figure a: q oss characteristic www.irf.com 9 0 - . 12 in the assembly line "a" as s embled on ww 16, 1999 example: with assembly this is an irfr120 lot code 1234 year 9 = 1999 dat e code we e k 16 part number logo international rectifier assembly lot code 916a irfu120 34 year 9 = 1999 dat e code or p = de s i gn at e s l e ad- f r e e product (opt ional) note: "p" in as sembly line pos ition i ndicates "l ead-f r ee" 12 34 week 16 a = assembly site code part number irf u120 line a logo lot code assembly int ernat ional rect if ier 10 www.irf.com 0 - . assembly example: wi t h as s e mb l y this is an irfu120 year 9 = 1999 dat e code line a week 19 in the assembly line "a" as s emb led on ww 19, 1999 lot code 5678 part number 56 irfu120 international logo rectifier lot code 919a 78 note: "p" in assembly line pos i ti on i ndi cates "l ead- f r ee" 56 78 assembly lot code rect ifier logo int ernat ional irfu120 part number week 19 dat e code year 9 = 1999 a = assembly site code p = designates lead-free product (optional) www.irf.com 11 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 2.6mh, r g = 25 ? , i as = 20a. pulse width 400s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/04 0 - . tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
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